1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a 4v drive nch+nch mosfet SH8K32 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) built-in g-s protection diode. 2) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) SH8K32 tb 2500 type ? absolute maximum ratings (ta=25 ? c) parameter v v dss symbol v v gss a i d a i dp a i s a i sp w/total p d c tch c tstg unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous source current (body diode) pulsed 60 20 4.5 18 1.0 18 2.0 150 ? 55 to + 150 limits ? 1 ? 1 ? 2 ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. each lead has same dimensions sop8 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 1 esd protection diode ? 2 body diode (1) (2) (3) (4) (8) (7) (6) (5) ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. ? 2 ? 1 ? 2 ? 1 (8) (7) (1) (2) (6) (5) (3) (4)
2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8K32 ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 20v, v ds =0v v dd 30v, v gs = 5v 60 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 60v, v gs =0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 46 65 i d = 4.5a, v gs = 10v ? 52 73 m m m i d = 4.5a, v gs = 4.5v ? 55 77 i d = 4.5a, v gs = 4.0v 4.0 ?? sv ds = 10v, i d = 4.5a ? 500 ? pf v ds = 10v ? 120 55 ? pf v gs =0v ? 12 ? pf f=1mhz ? 18 ? ns ? 40 ? ns ? 13 ? ns ? 7.0 ? ns ? 1.6 10 nc ? 2.5 ? nc i d = 4.5a ?? nc r l = 6.7 , r g = 10 v dd 30 v i d = 2.3a v gs = 10v r l = 13 r g =10 ? body diode characteristics (source-drain) (ta=25 ? c) forward voltage v sd ?? 1.2 v i s = 4.5a, v gs = 0v parameter symbol min. typ. max. unit conditions ? pulsed ?
3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8K32 ? electrical characteristic curves 0.5 1.0 1.5 2.0 2.5 3 .0 0.00001 0.0001 0.001 0.01 0.1 1 100 10 gate-source voltage : v gs (v) drain current : i d (a) fig.1 typical transfer characteristics ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v ds = 10v pulsed drain current : i d (a) 0.01 0.1 1 1 0 drain current : i d (a) 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) v gs = 10v v gs = 4.5v v gs = 4.0v ta = 25 c pulsed fig.2 static drain-source on-state resistance vs. drain current( ) 0.01 0.1 1 1 0 drain current : i d (a) 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) fig.3 static drain-source on-state resistance vs. drain current( ? ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 10v pulsed drain current : i d (a) v gs = 4.5v pulsed fig.4 static drain-source on-state resistance vs. drain current( ?? ) 0.01 0.1 1 1 0 drain current : i d (a) 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4v pulsed fig.5 static drain-source on-state resistance vs. drain current( iv ) drain current : i d (a) 0.01 0.1 1 1 0 drain current : i d (a) 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 0 0.5 1.0 1 .5 source-drain voltage : v sd (v) source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 01 3 246 57891 0 gate-source voltage : v gs (v) 0 100 200 300 static drain-source on-state resistance : r ds (on) ( m ) fig.7 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 4.5a i d = 2.25a 0.01 0.1 1 1 0 drain current : i d (a) 1 10 switching time : t (ns) 1000 10000 100 ta = 25 c v dd = 30v v gs = 10v r g = 10 pulsed fig.8 switching characteristics t r t f t d (off) t d (on) 02 6 4 8 10 1 2 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 9 10 gate-source voltage : v gs (v) ta = 25 c v dd = 30v i d = 4.5a r g = 10 pulsed fig.9 dynamic input characteristics
4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8K32 100 10000 1000 10 0.1 1 10 10 0 drain-source voltage : v ds (v) capacitance : c (pf) ta = 25 c f = 1mhz v gs = 0v fig.10 typical capacitance vs. drain-source voltage c iss c oss c rss ? measurement circuits fig.1-1 switching time test circuit v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching time waveforms 90% 50% 50% 10% 10 % 90% 90 % 10% v gs v ds t on t off t r t d(on) t r t d(off) pulse width fig.2-1 gate charge test circuit v gs i g (const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd
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